Selective Area Growth of GaAs in V-Grooved Trenches on Si(001) Substrates by Aspect-Ratio Trapping

Publisher： IOP Publishing

E-ISSN： 1741-3540|32|2|28101-28104

ISSN： 0256-307X

Source： Chinese Physics Letters, Vol.32, Iss.2, 2015-02, pp. : 28101-28104

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