Accurate modelling of InGaN quantum wells

By Wenzel Hans  

Optical and Quantum Electronics, Vol. 38, Iss. 12-14, 2006-09 ,pp. : 953-961

Springer Publishing Company

Access to resources Recommend Favorite

Improved Photoluminescence in InGaN/GaN Strained Quantum Wells

By Li-Zhen Ding   Hong Chen   Miao He   Yang Jiang   Tai-Ping Lu   Zhen Deng   Fang-Sheng Chen   Fan Yang   Qi Yang   Yu-Li Zhang  

Chinese Physics Letters, Vol. 31, Iss. 7, 2014-07 ,pp. : 76101-76104

IOP Publishing

Access to resources Recommend Favorite

Photoluminescence and photoluminescence excitation of AlGaAs/GaAs quantum wells with growth-interrupted heterointerfaces grown by molecular beam epitaxy

By Nakashima H.   Takeuchi T.   Inoue K.   Fukunaga T.   Bimberg D.   Christen J.  

Superlattices and Microstructures, Vol. 22, Iss. 4, 1997-12 ,pp. : 511-515

Academic Press

Access to resources Recommend Favorite

Photoluminescence of heterostructures with highly strained Ga_0.76In_0.24As quantum wells separated by GaAs_yP_1−y compensating barriers

By Shamakhov V.   Vinokurov D.   Stankevich A.   Kapitonov V.   Zorina S.   Nikolaev D.   Murashova A.   Bondarev A.   Tarasov I.  

Technical Physics Letters, Vol. 31, Iss. 12, 2005-12 ,pp. : 993-996

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

Effects of interface roughness on photoluminescence full width at half maximum in GaN/AlGaN quantum wells

By  

Chinese Physics B, Vol. 23, Iss. 11, 2014-11 ,pp. : 117803-117806

IOP Publishing

Access to resources Recommend Favorite