On the coexistence of localized and extended acceptor states in high gap semiconductors

Publisher: IOP Publishing

E-ISSN: 1361-6641|30|2|24009-24013

ISSN: 0268-1242

Source: Semiconductor Science and Technology, Vol.30, Iss.2, 2015-02, pp. : 24009-24013

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract