Defect generation and activation processes in HfO2 thin films: Contributions to stress‐induced leakage currents

E-ISSN： 1862-6319|212|3|547-553

ISSN： 1862-6300

Source： PHYSICA STATUS SOLIDI (A) APPLICATIONS AND MATERIALS SCIENCE, Vol.212, Iss.3, 2015-03, pp. : 547-553

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