Barrier Strain and Carbon Incorporation‐Engineered Performance Improvements for AlGaN/GaN High Electron Mobility Transistors**

Publisher： John Wiley & Sons Inc

E-ISSN： 1521-3862|21|1-2-3|33-40

ISSN： 0948-1907

Source： CHEMICAL VAPOR DEPOSITION (ELECTRONIC), Vol.21, Iss.1-2-3, 2015-03, pp. : 33-40

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

Al(Ga)N/GaN high electron mobility transistors on silicon

By  

PHYSICA STATUS SOLIDI (A) APPLICATIONS AND MATERIALS SCIENCE, Vol. 212, Iss. 5, 2015-05 ,pp. : 1049-1058

John Wiley & Sons Inc

Access to resources Recommend Favorite

Aspects of Epitaxial Design and Estimation of 2DEG Mobility in InAlN/AlN/InGaN/GaN High Electron Mobility Transistors

By  

PHYSICA STATUS SOLIDI (A) APPLICATIONS AND MATERIALS SCIENCE, Vol. 215, Iss. 2, 2018-01 ,pp. : n/a-n/a

John Wiley & Sons Inc

Access to resources Recommend Favorite

Self‐aligned normally‐off metal–oxide–semiconductor n++GaN/InAlN/GaN high electron mobility transistors

By  

PHYSICA STATUS SOLIDI (A) APPLICATIONS AND MATERIALS SCIENCE, Vol. 212, Iss. 5, 2015-05 ,pp. : 1086-1090

John Wiley & Sons Inc

Access to resources Recommend Favorite

A Charge Storage Based Enhancement Mode AlGaN/GaN High Electron Mobility Transistor

By  

Materials Science Forum, Vol. 2018, Iss. 913, 2018-03 ,pp. : 870-875

Trans Tech Publications

Access to resources Recommend Favorite

High‐performance AlGaN/AlN/GaN high electron mobility transistor with broad gate‐to‐source operation voltages

By  

PHYSICA STATUS SOLIDI (C) - CURRENT TOPICS IN SOLID STATE PHYSICS, Vol. 12, Iss. 6, 2015-06 ,pp. : 596-599

John Wiley & Sons Inc

Access to resources Recommend Favorite