Transient simulation and analysis of current collapse due to trapping effects in AlGaN/GaN high-electron-mobility transistor

Author： Xing-Ye Zhou   Zhi-Hong Feng   Yuan-Gang Wang   Guo-Dong Gu   Xu-Bo Song   Shu-Jun Cai  

Publisher： IOP Publishing

E-ISSN： 1741-4199|24|4|48503-48507

ISSN： 1674-1056

Source： Chinese Physics B, Vol.24, Iss.4, 2015-04, pp. : 48503-48507

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