The degradation mechanism of an AlGaN/GaN high electron mobility transistor under step-stress

Author： Wei-Wei Chen   Xiao-Hua Ma   Bin Hou   Jie-Jie Zhu   Jin-Cheng Zhang   Yue Hao  

Publisher： IOP Publishing

E-ISSN： 1741-4199|22|10|107303-107306

ISSN： 1674-1056

Source： Chinese Physics B, Vol.22, Iss.10, 2013-10, pp. : 107303-107306

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