Subthreshold behavior of AlInSb/InSb high electron mobility transistors

Author： Balamurugan N. B.   Priya G. Lakshmi   Manikandan S.   Chandra S. Theodore  

Publisher： IOP Publishing

E-ISSN： 1741-4199|24|7|76105-76109

ISSN： 1674-1056

Source： Chinese Physics B, Vol.24, Iss.7, 2015-07, pp. : 76105-76109

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