Time-dependent degradation of threshold voltage in AlGaN/GaN high electron mobility transistors

Author: Xiao-Hua Ma   Yuan-Qi Jiang   Xin-Hua Wang   Min Lü   Huo Zhang   Wei-Wei Chen   Xin-Yu Liu  

Publisher: IOP Publishing

ISSN: 1674-1056

Source: Chinese Physics B, Vol.23, Iss.1, 2014-01, pp. : 17303-17306

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Related content