Novel attributes and design considerations of effective oxide thickness in nano DG MOSFETs

E-ISSN： 1741-4199|24|4|47302-47308

ISSN： 1674-1056

Source： Chinese Physics B, Vol.24, Iss.4, 2015-04, pp. : 47302-47308

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

Back gate voltage and buried-oxide thickness influences on the series resistance of fully depleted SOI MOSFETs at 77 K

Le Journal de Physique IV, Vol. 08, Iss. PR3, 1998-06 ,pp. : Pr3-25-Pr3-28

Edp Sciences

Access to resources Recommend Favorite

On the determination of the effective channel length of MOSFETS

Le Journal de Physique IV, Vol. 04, Iss. C6, 1994-06 ,pp. : C6-25-C6-29

Edp Sciences

Access to resources Recommend Favorite

A new method to extract the effective trap density at the buried oxide/underlying substrate interface in enhancement-mode SOI MOSFETs at low temperatures

Le Journal de Physique IV, Vol. 08, Iss. PR3, 1998-06 ,pp. : Pr3-45-Pr3-48

Edp Sciences

Access to resources Recommend Favorite

Mesoscopic transport characteristics of nano-scale SOI MOSFETs: Coulomb blockade and localization

Le Journal de Physique IV, Vol. 12, Iss. 3, 2002-05 ,pp. : 93-96

Edp Sciences

Access to resources Recommend Favorite

A slab optical waveguide with negative effective thickness

By Dong Peng Li Jian-Guo Yang Hong Wei

Journal of Modern Optics, Vol. 57, Iss. 21, 2010-12 ,pp. : 2137-2140

Taylor & Francis Ltd

Access to resources Recommend Favorite