Back gate voltage and buried-oxide thickness influences on the series resistance of fully depleted SOI MOSFETs at 77 K

Publisher: Edp Sciences

E-ISSN: 1764-7177|08|PR3|Pr3-25-Pr3-28

ISSN: 1155-4339

Source: Le Journal de Physique IV, Vol.08, Iss.PR3, 1998-06, pp. : Pr3-25-Pr3-28

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

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