Design of high reliability RF-LDMOS by suppressing the parasitic bipolar effect using enhanced p-well and double epitaxy

Author： Xiangming Xu   Jingfeng Huang   Han Yu   Wensheng Qian   Zhengliang Zhou   Bo Han   Yong Wang   Pengfei Wang   Xiangming Xu  

Publisher： IOP Publishing

ISSN： 1674-4926

Source： Journal of Semiconductors, Vol.36, Iss.6, 2015-06, pp. : 64013-64018

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

Ultralow specific on-resistance high voltage trench SOI LDMOS with enhanced RESURF effect

By  

Journal of Semiconductors, Vol. 36, Iss. 2, 2015-02 ,pp. : 24010-24016

IOP Publishing

Access to resources Recommend Favorite

Investigation of the trigger voltage walk-in effect in LDMOS for high-voltage ESD protection

By Hailian Liang   Shurong Dong   Xiaofeng Gu   Lei Zhong   Jian Wu   Zongguang Yu  

Journal of Semiconductors, Vol. 35, Iss. 9, 2014-09 ,pp. : 94005-94008

IOP Publishing

Access to resources Recommend Favorite

A novel double RESURF LDMOS for HVIC's

By Hardikar S.   De Souza M.M.   Xu Y.Z.   Pease T.J.   Sankara Narayanan E.M.  

Microelectronics, Vol. 35, Iss. 3, 2004-03 ,pp. : 305-310

Elsevier

Access to resources Recommend Favorite

Effect of in situ annealing on highly-mismatched In 0.75 Ga 0.25 As on InP grown using molecular beam epitaxy

By Ren Y.   Micovic M.   Cai W.   Mohney S.   Lord S.   Miller D.   Mayer T.  

Journal of Electronic Materials, Vol. 28, Iss. 7, 1999-07 ,pp. : 887-893

Springer Publishing Company

Access to resources Recommend Favorite

High breakdown voltage InGaAs/InP double heterojunction bipolar transistors with f max = 256 GHz and BV CEO = 8.3 V

By Wei Cheng   Yan Zhao   Hanchao Gao   Chen Chen   Naibin Yang  

Journal of Semiconductors, Vol. 33, Iss. 1, 2012-01 ,pp. : 14004-14006

IOP Publishing

Access to resources Recommend Favorite