Thermal characterization of DC and small-signal parameters of 150 nm and 250 nm gate-length AlGaN/GaN HEMTs grown on a SiC substrate

By  

Semiconductor Science and Technology, Vol. 30, Iss. 12, 2015-12 ,pp. : 125005-125014

IOP Publishing

Access to resources Recommend Favorite

Small signal measurement of Sc 2 O 3 AlGaN/GaN moshemts

By Luo B.   Mehandru R.   Kang B.S.   Kim J.   Ren F.   Gila B.P.   Onstine A.H.   Abernathy C.R.   Pearton S.J.   Gotthold D.   Birkhahn R.   Peres B.   Fitch R.   Gillespie J.K.   Jenkins T.   Sewell J.   Via D.   Crespo A.  

Solid-State Electronics, Vol. 48, Iss. 2, 2004-02 ,pp. : 355-358

Elsevier

Access to resources Recommend Favorite

High performance AlGaN/GaN HEMTs with AlN/SiN_x passivation

By Xin Tan   Yuanjie Lü   Guodong Gu   Li Wang   Shaobo Dun   Xubo Song   Hongyu Guo   Jiayun Yin   Shujun Cai   Zhihong Feng  

Journal of Semiconductors, Vol. 36, Iss. 7, 2015-07 ,pp. : 74008-74011

IOP Publishing

Access to resources Recommend Favorite

Dual-gate AlGaN/GaN MIS-HEMTs using Si

By Gao Tao   Xu Ruimin   Zhang Kai   Kong Yuechan   Zhou Jianjun   Kong Cen   Dong Xun   Chen Tangsheng   Hao Yue  

Semiconductor Science and Technology, Vol. 30, Iss. 11, 2015-11 ,pp. : 115010-115014

IOP Publishing

Access to resources Recommend Favorite

Simulation of thermal management in AlGaN/GaN HEMTs with integrated diamond heat spreaders

By Wang A.   Tadjer M.J.   Calle F.  

Semiconductor Science and Technology, Vol. 28, Iss. 5, 2013-05 ,pp. : 55010-55017

IOP Publishing

Access to resources Recommend Favorite