Density and size control of InP/GaInP quantum dots on GaAs substrate grown by gas source molecular beam epitaxy

By Rödel R   Bauer A   Kremling S   Höfling S   Kamp M   Worschech L   Forchel A   Reitzenstein S  

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Effect of phosphorus on electrical properties of undoped InP grown at low temperature by atomic layer molecular beam epitaxy

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Impact of P/In flux ratio and epilayer thickness on faceting for nanoscale selective area growth of InP by molecular beam epitaxy

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The strain effect on the superconducting properties of BaFe₂(As, P)₂ thin films grown by molecular beam epitaxy

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Properties of Si/Si_{1 − x}Ge_x quantum dots and wires grown by selective epitaxy

By Vescan L.   Dieker C.   Loo R.   Apetz R.   Hartmann A.   Wickenhäuser S.   Lüth H.  

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