Comparison of composition and atomic structure of amorphous indium gallium zinc oxide thin film transistor before and after positive bias temperature stress by transmission electron microscopy

Author： Prakash Gokul   Gray Jennifer L   Kanicki J   Prakash Gokul  

Publisher： IOP Publishing

E-ISSN： 1361-6641|30|5|55008-55015

ISSN： 0268-1242

Source： Semiconductor Science and Technology, Vol.30, Iss.5, 2015-05, pp. : 55008-55015

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