The effect of annealing temperature on the stability of gallium tin zinc oxide thin film transistors

Author： Nguyen Ngoc McCall Briana Alston Robert Collis Ward Iyer Shanthi

E-ISSN： 1361-6641|30|10|105004-105012

ISSN： 0268-1242

Source： Semiconductor Science and Technology, Vol.30, Iss.10, 2015-10, pp. : 105004-105012

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

UV-assisted rapid thermal annealing for solution-processed zinc oxide thin-film transistors

By Hwang Jaeeun Park Jaehoon Kim Hongdoo

Semiconductor Science and Technology, Vol. 29, Iss. 9, 2014-09 ,pp. : 95019-95024

IOP Publishing

Access to resources Recommend Favorite

Subgap states in p-channel tin monoxide thin-film transistors from temperature-dependent field-effect characteristics

By JeongChan-Yong LeeDaeun HanYoung-Joon ChoiYong-Jin KwonHyuck-In

Semiconductor Science and Technology, Vol. 30, Iss. 8, 2015-08 ,pp. : 85004-85009

IOP Publishing

Access to resources Recommend Favorite

Preparation and characterization of molybdenum-doped indium-zinc-oxide thin film transistors

Semiconductor Science and Technology, Vol. 30, Iss. 4, 2015-01 ,pp. : 45008-45012

IOP Publishing

Access to resources Recommend Favorite

Effect of annealing temperature on structural and electrical properties of high-κ YbTixOy gate dielectrics for InGaZnO thin film transistors

Semiconductor Science and Technology, Vol. 30, Iss. 1, 2015-01 ,pp. : 15004-15011

IOP Publishing

Access to resources Recommend Favorite

Effects of air-annealing on the electrical properties of p-type tin monoxide thin-film transistors

By Cho In-Tak U Myeonghun Song Sang-Hun Lee Jong-Ho Kwon Hyuck-In

Semiconductor Science and Technology, Vol. 29, Iss. 4, 2014-04 ,pp. : 45001-45006

IOP Publishing

Access to resources Recommend Favorite