Electronic structure of germanium selenide investigated using ultra-violet photo-electron spectroscopy

Author： MishraP   LohaniH   KunduA K   PatelR   SolankiG K   MenonKrishnakumar S R   SekharB R  

Publisher： IOP Publishing

E-ISSN： 1361-6641|30|7|75001-75008

ISSN： 0268-1242

Source： Semiconductor Science and Technology, Vol.30, Iss.7, 2015-07, pp. : 75001-75008

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

The Pr 2 O 3 /Si(001) interface studied by synchrotron radiation photo-electron spectroscopy

By Schmeiszer D.   Mussig H.-J.  

Solid-State Electronics, Vol. 47, Iss. 10, 2003-10 ,pp. : 1607-1611

Elsevier

Access to resources Recommend Favorite

Inelastic electron tunnelling spectroscopy in N-MOS junctions with ultra-thin gate oxide

By Petit C.   Salace G.   Vuillaume D.  

Solid-State Electronics, Vol. 47, Iss. 10, 2003-10 ,pp. : 1663-1668

Elsevier

Access to resources Recommend Favorite

Valence Band Studies of p - and n -Type Ba 8 Ga 16 Ge 30 Using High-Resolution Photoelectron Spectroscopy

By Tang J.  

Journal of Electronic Materials, Vol. 40, Iss. 5, 2011-05 ,pp. : 769-772

Springer Publishing Company

Access to resources Recommend Favorite

Study of Short- and Long-Term Effectiveness of Ammonium Sulfide as Surface Passivation for InAs/GaSb Superlattices Using X-Ray Photoelectron Spectroscopy

By Banerjee Koushik  

Journal of Electronic Materials, Vol. 39, Iss. 10, 2010-10 ,pp. : 2210-2214

Springer Publishing Company

Access to resources Recommend Favorite

An X-band ultra-low phase noise differential Colpitts voltage-controlled oscillator using 0.15 m pseudomorphic high electron mobility transistor technology

By Fu Jeffrey  

International Journal of Electronics, Vol. 97, Iss. 5, 2010-05 ,pp. : 605-611

Taylor & Francis Ltd

Access to resources Recommend Favorite