Demonstration of low resistance ohmic contacts to p-type (2021) GaN

By YonkeeBenjamin P   FarrellRobert M   LeonardJohn T   DenBaarsSteven P   SpeckJim S   NakamuraShuji  

Semiconductor Science and Technology, Vol. 30, Iss. 7, 2015-07 ,pp. : 75007-75011

IOP Publishing

Access to resources Recommend Favorite

Ohmic contacts to n-type GaN

By Miller Stephen   Holloway Paul  

Journal of Electronic Materials, Vol. 25, Iss. 11, 1996-11 ,pp. : 1709-1714

Springer Publishing Company

Access to resources Recommend Favorite

Low resistance bilayer Nd/Al ohmic contacts on n-type GaN

By Lee Ching-Ting   Yeh Ming-Yuan   Tsai Chang-Da   Lyu Yen-Tang  

Journal of Electronic Materials, Vol. 26, Iss. 3, 1997-03 ,pp. : 262-265

Springer Publishing Company

Access to resources Recommend Favorite

Growth of zinc- blende GaN on GaAs (100) substrates at high temperature using low-pressure MOVPE with a Low V/lll molar ratio

By Nakadaira Atsushi   Tanaka Hidenao  

Journal of Electronic Materials, Vol. 26, Iss. 3, 1997-03 ,pp. : 320-324

Springer Publishing Company

Access to resources Recommend Favorite

In 0.23 Ga 0.77 N/GaN MQW LEDs with a low temperature GaN cap layer

By Wu L.W.   Chang S.J.   Su Y.K.   Chuang R.W.   Hsu Y.P.   Kuo C.H.   Lai W.C.   Wen T.C.   Tsai J.M.   Sheu J.K.  

Solid-State Electronics, Vol. 47, Iss. 11, 2003-11 ,pp. : 2027-2030

Elsevier

Access to resources Recommend Favorite