Ion implantation of the 4H SiC epitaxial layers and substrates with 2 MeV Se+ and 1 MeV Al+ ions

Publisher: John Wiley & Sons Inc

E-ISSN: 1097-4539|44|5|371-378

ISSN: 0049-8246

Source: X-RAY SPECTROMETRY, Vol.44, Iss.5, 2015-09, pp. : 371-378

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract