Detection of dislocation‐related midgap levels in pulsed laser deposited GaN by photo‐induced current transient spectroscopy

Publisher: John Wiley & Sons Inc

E-ISSN: 1521-3951|252|4|800-803

ISSN: 0370-1972

Source: PHYSICA STATUS SOLIDI (B) BASIC SOLID STATE PHYSICS, Vol.252, Iss.4, 2015-04, pp. : 800-803

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Abstract