Publisher： John Wiley & Sons Inc
E-ISSN： 1521-3951|252|4|795-799
ISSN： 0370-1972
Source： PHYSICA STATUS SOLIDI (B) BASIC SOLID STATE PHYSICS, Vol.252, Iss.4, 2015-04, pp. : 795-799
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Abstract
In and Sn codoped β‐Zn4Sb3 single crystals were prepared by a Sn‐flux method according to the formula Zn4.4Sb3Sn3Inx(x = 0–0.5). The thermal weight loss is suppressed completely until the melting point of the single crystals. All crystals exhibit p‐type conduction. The carrier mobility of the single crystals is increased, compared to a β‐Zn4Sb3 polycrystalline sample. All samples possess relatively high electrical conductivity, reaching 6.3 × 104 S/m for the sample with x = 0.18. The Seebeck coefficient is enhanced on increasing of the total content of In and Sn. The sample with x = 0.5 exhibits excellent electrical properties, and shows a maximal power factor of 1.53 × 10−3 W/m/K2 at 603 K.
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