Effects of a GaN cap layer on the reliability of AlGaN/GaN Schottky diodes

Publisher: John Wiley & Sons Inc

E-ISSN: 1862-6319|212|5|1158-1161

ISSN: 1862-6300

Source: PHYSICA STATUS SOLIDI (A) APPLICATIONS AND MATERIALS SCIENCE, Vol.212, Iss.5, 2015-05, pp. : 1158-1161

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Abstract