Thick (~1 μm) p‐type InxGa1–xN (x ~ 0.36) grown by MOVPE at a low temperature (~570 °C)

Publisher： John Wiley & Sons Inc

E-ISSN： 1521-3951|252|5|909-912

ISSN： 0370-1972

Source： PHYSICA STATUS SOLIDI (B) BASIC SOLID STATE PHYSICS, Vol.252, Iss.5, 2015-05, pp. : 909-912

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