Photoluminescence characterization of InGaN/InGaN quantum wells grown by plasma‐assisted molecular beam epitaxy: Impact of nitrogen and galium fluxes

Publisher: John Wiley & Sons Inc

E-ISSN: 1521-3951|252|5|983-988

ISSN: 0370-1972

Source: PHYSICA STATUS SOLIDI (B) BASIC SOLID STATE PHYSICS, Vol.252, Iss.5, 2015-05, pp. : 983-988

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract