Lattice pulling effect and strain relaxation in axial (In,Ga)N/GaN nanowire heterostructures grown on GaN‐buffered Si(111) substrate

Publisher： John Wiley & Sons Inc

E-ISSN： 1862-6319|212|4|736-739

ISSN： 1862-6300

Source： PHYSICA STATUS SOLIDI (A) APPLICATIONS AND MATERIALS SCIENCE, Vol.212, Iss.4, 2015-04, pp. : 736-739

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