High‐performance AlGaN/AlN/GaN high electron mobility transistor with broad gate‐to‐source operation voltages

E-ISSN： 1610-1642|12|6|596-599

ISSN： 1862-6351

Source： PHYSICA STATUS SOLIDI (C) - CURRENT TOPICS IN SOLID STATE PHYSICS, Vol.12, Iss.6, 2015-06, pp. : 596-599

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