Electrical characteristics of vapor deposited amorphous MoS2 two‐terminal structures and back gate thin film transistors with Al, Au, Cu and Ni‐Au contacts

Publisher： John Wiley & Sons Inc

E-ISSN： 1610-1642|12|7|975-979

ISSN： 1862-6351

Source： PHYSICA STATUS SOLIDI (C) - CURRENT TOPICS IN SOLID STATE PHYSICS, Vol.12, Iss.7, 2015-07, pp. : 975-979

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