A numerical analysis of a MOCVD process for the growth of GaN nanowires using GaCl3 and NH3

Publisher: John Wiley & Sons Inc

E-ISSN: 1610-1642|12|4‐5|389-393

ISSN: 1862-6351

Source: PHYSICA STATUS SOLIDI (C) - CURRENT TOPICS IN SOLID STATE PHYSICS, Vol.12, Iss.4‐5, 2015-04, pp. : 389-393

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract