Publisher： John Wiley & Sons Inc
E-ISSN： 1610-1642|9|10‐11|1878-1883
ISSN： 1862-6351
Source： PHYSICA STATUS SOLIDI (C) - CURRENT TOPICS IN SOLID STATE PHYSICS, Vol.9, Iss.10‐11, 2012-10, pp. : 1878-1883
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Abstract
AbstractSilicon rich silicon oxynitride (SRSON) were deposited by ECR‐PECVD to form silicon nanostructures. The effect of argon flow during the deposition was investigated. The silicon nanoparticles were fabricated by a classical thermal treatment of SRSON films. The structural properties of the SRSON films were investigated by RBS and FTIR measurements. We show that the silicon excess in the SiOxNy matrix changes slightly with Ar flow but it has a significant impact on the silicon nanoparticles morphology embedded in the silicon oxynitride layer. Different shapes for silicon nanostructures ranging from separated Si nanocrystals to Si nanocolumns were formed as studied by energy‐filtred transmission electron microscopy analysis (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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