Publisher: John Wiley & Sons Inc
E-ISSN: 1527-2648|17|5|709-715
ISSN: 1438-1656
Source: ADVANCED ENGINEERING MATERIALS (ELECTRONIC), Vol.17, Iss.5, 2015-05, pp. : 709-715
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Abstract
Related content
Al 2 O 3 formation on Si by catalytic chemical vapor deposition
By Ogita Y.-I. Iehara S. Tomita T.
Thin Solid Films, Vol. 430, Iss. 1, 2003-04 ,pp. :
Growth of β-Ga2O3 nanoparticles by pulsed laser ablation technique
By Lam H.M. Hong M.H. Yuan S. Chong T.C.
Applied Physics A, Vol. 79, Iss. 8, 2004-12 ,pp. :
Brillouin zone and band structure of β‐Ga2O3
PHYSICA STATUS SOLIDI (B) BASIC SOLID STATE PHYSICS, Vol. 252, Iss. 4, 2015-04 ,pp. :