Investigation of strain effect on the hole mobility in GOI tri-gate pFETs including quantum confinement

ISSN： 1674-1056

Source： Chinese Physics B, Vol.23, Iss.10, 2014-10, pp. : 108501-108504

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Related content

Multi-Wire Tri-Gate Silicon Nanowires Reaching Milli-pH Unit Resolution in One Micron Square Footprint

By Accastelli Enrico Scarbolo Paolo Ernst Thomas Palestri Pierpaolo Selmi Luca Guiducci Carlotta

Biosensors, Vol. 6, Iss. 1, 2016-03 ,pp. : 9-9

MDPI

Access to resources Recommend Favorite

Effect of tensile strain on optical properties of AlGaP-based neighboring confinement structure

By Ohta T. Usami N. Issiki F. Shiraki Y.

Superlattices and Microstructures, Vol. 23, Iss. 1, 1998-01 ,pp. : 97-102

Academic Press

Access to resources Recommend Favorite

Gate-controlled Kondo screening in graphene: Quantum criticality and electron-hole asymmetry

By Vojta M. Fritz L. Bulla R.

EPL (EUROPHYSICS LETTERS), Vol. 90, Iss. 2, 2010-05 ,pp. : 27006-27006

Edp Sciences

Access to resources Recommend Favorite

Effect of interface-roughness scattering on mobility degradation in SiGe p-MOSFETs with a high- k dielectric/SiO 2 gate stack

By Xue-Feng Zhang Jing-Ping Xu Pui-To Lai Chun-Xia Li Jian-Guo Guan

Chinese Physics, Vol. 16, Iss. 12, 2007-12 ,pp. : 3820-3826

IOP Publishing

Access to resources Recommend Favorite

Quantum Thermal Effect of Nonstatic Charged Black Hole

By Lichun Z. Yueqin W. Ren Z.

International Journal of Theoretical Physics, Vol. 38, Iss. 2, 1999-02 ,pp. : 665-673

Springer Publishing Company

Access to resources Recommend Favorite