Threshold and probability of impact ionization by electrons in narrow-gap p-type semiconductors with highly degenerate holes

Author: Dmitriev A.   Evlyukhin A.  

Publisher: MAIK Nauka/Interperiodica

ISSN: 1063-7834

Source: Physics of the Solid State, Vol.39, Iss.2, 1997-02, pp. : 240-244

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