Variation of the electronic and adsorption properties of GaAs(100) in the transition from an As-to Ga-rich surface

Author： Benemanskaya G. Daineka D. Frank-Kamenetskaya G.

ISSN： 1063-7834

Source： Physics of the Solid State, Vol.44, Iss.5, 2002-05, pp. : 989-993

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Related content

Cesium adsorption on the β2-GaAs(001) surface

By Kul’kova S. Eremeev S. Postnikov A. Shein I.

Journal of Experimental and Theoretical Physics, Vol. 104, Iss. 4, 2007-04 ,pp. : 590-601

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

Mechanism of H₂S molecule adsorption on the GaAs(100) surface: Ab initio quantum-chemical analysis

By Lebedev M.

Physics of the Solid State, Vol. 48, Iss. 1, 2006-01 ,pp. : 164-171

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

The electronic properties of the Cs/GaAs(100) interface and the formation of metastable Cs clusters

By Benemanskaya G. Daineka D. Frank-Kamenetskaya G.

Journal of Experimental and Theoretical Physics, Vol. 92, Iss. 2, 2001-02 ,pp. : 297-303

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

REFLECTION-ABSORPTION IR SPECTROSCOPY AS AN IN-SITU PROBE OF THE SURFACE CHEMISTRY OF SEMICONDUCTOR GROWTH INTERMEDIATES : THE ADSORPTION OF TRIMETHYLGALLIUM AT GaAs (100) SURFACES AT 300 K

Le Journal de Physique IV, Vol. 02, Iss. C2, 1991-09 ,pp. : C2-167-C2-173

Edp Sciences

Access to resources Recommend Favorite

Growth dynamics of GaAs on a vicinal surface of GaAs(100) in migration-stimulated epitaxy: Computer simulation

By Tsyrlin G.

Technical Physics Letters, Vol. 23, Iss. 2, 1997-02 ,pp. : 154-156

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite