Theory of laterally nonuniform MOS transistor under weak inversion: A technique for determination of interface parameters

Author： Bormontov E.   Levin M.   Vyalykh S.   Borisov S.  

Publisher： MAIK Nauka/Interperiodica

ISSN： 1063-7842

Source： Technical Physics, Vol.46, Iss.2, 2001-02, pp. : 192-197

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