Effect of thermal-field treatment and ionizing radiation on the energy spectrum of interfacial states at the Si-SiO₂ interface of a MOS transistor

Author： Atamuratov A. Zainabidinov S. Yusupov A. Daliev Kh. Adinaev K.

Publisher： MAIK Nauka/Interperiodica

ISSN： 1063-7842

Source： Technical Physics, Vol.42, Iss.9, 1997-09, pp. : 1106-1107

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