Growth of delta-doped silicon layers by molecular beam epitaxy with simultaneous lowenergy ion bombardment of the growth surface

Author： Shengurov Sh.   Shabanov V.   Shabanov A.  

Publisher： MAIK Nauka/Interperiodica

ISSN： 1063-7850

Source： Technical Physics Letters, Vol.23, Iss.4, 1997-04, pp. : 281-283

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