Investigation of the growth characteristics of epitaxial GaN layers on sapphire by microcathodoluminescence

Author： Usikov A.   Tret’yakov V.   Lundin V.   Zadiranov Yu.   Pushnyi B.   Konnikov S.  

Publisher： MAIK Nauka/Interperiodica

ISSN： 1063-7850

Source： Technical Physics Letters, Vol.25, Iss.4, 1999-04, pp. : 253-256

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