Impact-ionization autosolitons in silicon with deep impurity levels

ISSN： 1063-7850

Source： Technical Physics Letters, Vol.29, Iss.12, 2003-12, pp. : 993-995

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Related content

Deep impurity-center ionization by far-infrared radiation

By Ganichev S. Prettl W. Yassievich I.

Physics of the Solid State, Vol. 39, Iss. 11, 1997-11 ,pp. : 1703-1726

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

Forbidden optical transitions between impurity levels in silicon and gallium phosphide

By Pokrovskii Ya. Smirnova O. Khval’kovskii N.

Journal of Experimental and Theoretical Physics, Vol. 90, Iss. 2, 2000-02 ,pp. : 404-406

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

Electron impact-ionization effects in UHV/CVD SiGe HBT's in the temperature range of 300 to 83 K

Le Journal de Physique IV, Vol. 08, Iss. PR3, 1998-06 ,pp. : Pr3-103-Pr3-107

Edp Sciences

Access to resources Recommend Favorite

BAND-STRUCTURE DEPENDENT IMPACT IONIZATION IN SILICON AND GALLIUM ARSENIDE

Le Journal de Physique Colloques, Vol. 42, Iss. C7, 1981-10 ,pp. : C7-63-C7-69

Edp Sciences

Access to resources Recommend Favorite

Thermal Behaviour of Deep Levels at Dislocations in n-Type Silicon

Journal de Physique III, Vol. 7, Iss. 12, 1997-12 ,pp. : 2361-2366

Edp Sciences

Access to resources Recommend Favorite