The electroluminescence of SiO2 layers with excess silicon

Author： Baraban A.   Egorov D.   Petrov Yu.   Miloglyadova L.  

Publisher： MAIK Nauka/Interperiodica

ISSN： 1063-7850

Source： Technical Physics Letters, Vol.30, Iss.1, 2004-01, pp. : 40-41

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Related content

The effect of annealing on the electroluminescence of SiO2 layers with excess silicon

By Baraban A.   Egorov D.   Petrov Yu.   Miloglyadova L.  

Technical Physics Letters, Vol. 30, Iss. 2, 2004-02 ,pp. : 85-87

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

Electroluminescence in SiO2 layers in various structures

By Baraban A.   Konorov P.   Miloglyadova L.   Troshikhin A.  

Physics of the Solid State, Vol. 46, Iss. 4, 2004-04 ,pp. : 770-774

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

Charge spectroscopy of SiO 2 layers with embedded silicon nanocrystals modified by irradiation with high-energy ions

By Antonova I.   Smagulova S.   Neustroev E.   Skuratov V.   Jedrzejewski J.   Savir E.   Balberg I.  

Semiconductors, Vol. 45, Iss. 5, 2011-05 ,pp. : 582-586

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

Electroluminescence of Si-SiO2 structures subjected to sequential ion implantation with silicon and carbon

By Baraban A.   Petrov Yu.  

Physics of the Solid State, Vol. 48, Iss. 5, 2006-05 ,pp. : 966-968

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite