Related content

Brittle-plastic relaxation of misfit stresses in the Si(001)/Si_{1 − x} Ge _x system

By Martovitsky V.   Krivobok V.  

Journal of Experimental and Theoretical Physics, Vol. 113, Iss. 2, 2011-08 ,pp. : 288-305

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

Si_1−x Ge_x/Si(001) relaxed buffer layers grown by chemical vapor deposition at atmospheric pressure

By Vostokov N.   Drozdov Yu.   Krasil’nik Z.   Kuznetsov O.   Novikov A.   Perevoshchikov V.   Shaleev M.  

Physics of the Solid State, Vol. 47, Iss. 1, 2005-01 ,pp. : 42-45

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

Study of the component distribution in Si/Ge_xSi_1−x /Si heterostructures grown by molecular beam epitaxy

By Kesler V.   Logvinskii L.   Mashanov V.   Pchelyakov O.   Ul’yanov V.  

Physics of the Solid State, Vol. 44, Iss. 4, 2002-04 ,pp. : 709-713

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

Heteroepitaxy of Ge _x Si_{1 − x} (x ∼ 0.4–0.5) films on Si(001) substrates misoriented to (111): Formation of short edge misfit dislocations alone in the misorientation direction

By Bolkhovityanov Yu.   Deryabin A.   Gutakovskii A.   Sokolov L.  

Physics of the Solid State, Vol. 52, Iss. 1, 2010-01 ,pp. : 32-36

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

Spectral and current-voltage characteristics of Si-Si_1−x Ge_x heterostructures grown by liquid phase epitaxy

By Saidov A.   Kutlimratov A.   Sapaev B.   Davlatov U.  

Technical Physics Letters, Vol. 27, Iss. 4, 2001-04 ,pp. : 319-322

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite