Author： Kukushkin S. Osipov A. Gordeev S. Korchagina S.
Publisher： MAIK Nauka/Interperiodica
ISSN： 1063-7850
Source： Technical Physics Letters, Vol.31, Iss.10, 2005-10, pp. : 859-861
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Related content
Access to resources
Recommend
Diffusion in porous silicon carbide
By Pankratov E.
Physics of the Solid State, Vol. 53, Iss. 5, 2011-05 ,pp. :
Reshock behavior of silicon carbide
Le Journal de Physique IV, Vol. 110, Iss. issue, 2003-09 ,pp. :
Polytypism of silicon carbide and Schottky barriers
Physics of the Solid State, Vol. 48, Iss. 2, 2006-02 ,pp. :
Estimates of the spontaneous polarization in silicon carbide
Physics of the Solid State, Vol. 49, Iss. 4, 2007-04 ,pp. :