Multilayer AIN/AlGaN/GaN/AlGaN heterostructures with quantum wells for high-power field-effect transistors grown by ammonia MBE

Author: Alekseev A.   Aleksandrov S.   Byrnaz A.   Velikovski L.   Velikovski I.   Veretekha A.   Krasovitski D.   Pavlenko M.   Petrov S.   Pogorel’ski M.   Pogorel’ski Yu.   Sokolov I.   Sokolov M.   Stepanov M.   Tkachenko A.   Shkurko A.   Chaly V.  

Publisher: MAIK Nauka/Interperiodica

ISSN: 1063-7850

Source: Technical Physics Letters, Vol.32, Iss.11, 2006-11, pp. : 960-963

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