Effect of ultrasonic treatment on the generation characteristics of a semiconductor-glass interface

Author： Vlasov S. Ovsyannikov A. Zaveryukhin B.

ISSN： 1063-7850

Source： Technical Physics Letters, Vol.35, Iss.4, 2009-04, pp. : 312-314

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Related content

The effect of ultrasonic treatment on the generation characteristics of a Si-SiO₂ interface

By Parchinskii P. Vlasov S. Ligai L. Shchukina O.

Technical Physics Letters, Vol. 29, Iss. 5, 2003-05 ,pp. : 392-394

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

Characteristics of drain-modulated generation current in n-type metal-oxide-semiconductor field-effect transistor

By Hai-Feng Chen Li-Xin Guo Pu-Yang Zheng Zhao Dong Qian Zhang

Chinese Physics B, Vol. 24, Iss. 7, 2015-07 ,pp. : 78502-78507

IOP Publishing

Access to resources Recommend Favorite

Effect of pressure on the properties of a silicon-glass interface

By Vlasov S. Ergasheva M. Adylov T.

Technical Physics Letters, Vol. 31, Iss. 5, 2005-05 ,pp. : 444-445

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

The effect of ultrasonic treatment on the internal friction in silicon

By Onanko A. Podolyan A. Ostrovskii I.

Technical Physics Letters, Vol. 29, Iss. 8, 2003-08 ,pp. : 634-635

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

Effect of Heat Treatment on the Ultrasonic Attenuation in Mn-Ferrites

Le Journal de Physique IV, Vol. 07, Iss. C1, 1997-03 ,pp. : C1-223-C1-224

Edp Sciences

Access to resources Recommend Favorite