Nitride-based laser diodes grown by plasma-assisted molecular beam epitaxy

Author： Skierbiszewski C   Turski H   Muziol G   Siekacz M   Sawicka M   Cywiński G   Wasilewski Z R   Porowski S  

Publisher： IOP Publishing

ISSN： 0022-3727

Source： Journal of Physics D: Applied Physics, Vol.47, Iss.7, 2014-02, pp. : 73001-73018

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Related content

Controlling active nitrogen flux in plasma-assisted molecular beam epitaxy of group III nitrides

By Jmerik V.   Mizerov A.   Shubina T.   Listoshin S.   Ivanov S.  

Technical Physics Letters, Vol. 33, Iss. 4, 2007-04 ,pp. : 333-336

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

Structure and Magnetic Properties of (In,Mn)As Based Core-Shell Nanowires Grown on Si(111) by Molecular-Beam Epitaxy

By Dong Pan   Si-Liang Wang   Hai-Long Wang   Xue-Zhe Yu   Xiao-Lei Wang   Jian-Hua Zhao  

Chinese Physics Letters, Vol. 31, Iss. 7, 2014-07 ,pp. : 78103-78107

IOP Publishing

Access to resources Recommend Favorite

Cu-doped GaN grown by molecular beam epitaxy

By  

Journal of Physics: Conference Series , Vol. 200, Iss. 6, 2010-01 ,pp. : 21-24

IOP Publishing

Access to resources Recommend Favorite

Photoluminescence of Si/Ge nanostructures grown by molecular-beam epitaxy at low temperatures

By Burbaev T.   Kurbatov V.   Pogosov A.   Rzaev M.   Sibel’din N.   Tsvetkov V.  

Physics of the Solid State, Vol. 46, Iss. 1, 2004-01 ,pp. : 71-73

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

Morphology and Microstructure of InAs Nanowires on GaAs Substrates Grown by Molecular Beam Epitaxy

By Sui-Xing Shi   Zhen-Yu Lu   Zhi Zhang   Chen Zhou   Ping-Ping Chen   Jin Zou  

Chinese Physics Letters, Vol. 31, Iss. 9, 2014-09 ,pp. : 98101-98104

IOP Publishing

Access to resources Recommend Favorite