Germanium PMOSFETs with Low-Temperature Si2H6 Passivation Featuring High Hole Mobility and Superior Negative Bias Temperature Instability

Author： Hong-Juan Wang   Gen-Quan Han   Yan Liu   Jing Yan   Chun-Fu Zhang   Jin-Cheng Zhang   Yue Hao  

Publisher： IOP Publishing

ISSN： 0256-307X

Source： Chinese Physics Letters, Vol.31, Iss.5, 2014-05, pp. : 58503-58506

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