The effects of channel doping concentration for n-type junction-less double-gate poly-Si nanostrip transistors

Author: Liu Keng-Ming   Peng Fan-I   Peng Kang-Ping   Lin Horng-Chih   Huang Tiao-Yuan  

Publisher: IOP Publishing

ISSN: 0268-1242

Source: Semiconductor Science and Technology, Vol.29, Iss.5, 2014-05, pp. : 55001-55007

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next