Contact resistance measurement of Ge2Sb2Te5 phase change material to TiN electrode by spacer etched nanowire

Author： Huang R   Sun K   Kiang K S   Chen R   Wang Y   Gholipour B   Hewak D W   De Groot C H  

Publisher： IOP Publishing

ISSN： 0268-1242

Source： Semiconductor Science and Technology, Vol.29, Iss.9, 2014-09, pp. : 95003-95010

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