Evolution and characteristics of GaN nanowires produced via maskless reactive ion etching

Author： Haab Anna   Mikulics Martin   Sutter Eli   Jin Jiehong   Stoica Toma   Kardynal Beata   Rieger Torsten   Grützmacher Detlev   Hardtdegen Hilde  

Publisher： IOP Publishing

ISSN： 0957-4484

Source： Nanotechnology, Vol.25, Iss.25, 2014-06, pp. : 255301-255311

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