Author: Lijuan Wu Wentong Zhang Bo Zhang Zhaoji Li
Publisher: IOP Publishing
ISSN: 1674-4926
Source: Journal of Semiconductors, Vol.35, Iss.2, 2014-02, pp. : 24004-24008
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Related content
Novel 700 V high-voltage SOI LDMOS structure with folded drift region
Journal of Semiconductors, Vol. 36, Iss. 2, 2015-02 ,pp. :
By Liu Siyang Wang Hao Ye Ran Zhang Chunwei Sun Weifeng
Semiconductor Science and Technology, Vol. 29, Iss. 11, 2014-11 ,pp. :
High-voltage lateral trench gate SOI-LDMOSFETs
By Park J.M. Klima R. Selberherr S.
Microelectronics, Vol. 35, Iss. 3, 2004-03 ,pp. :