Related content

Thin-barrier enhancement-mode AlGaN/GaN MIS-HEMT using ALD Al2O3 as gate insulator

By Zheli Wang   Jianjun Zhou   Yuechan Kong   Cen Kong   Xun Dong   Yang Yang   Tangsheng Chen  

Journal of Semiconductors, Vol. 36, Iss. 9, 2015-09 ,pp. : 94004-94007

IOP Publishing

Access to resources Recommend Favorite

Static characteristics and short channel effect in enhancement-mode AlN/GaN/AlN N-polar MISFET with self-aligned source/drain regions

By  

Journal of Semiconductors, Vol. 35, Iss. 12, 2014-12 ,pp. : 124006-124010

IOP Publishing

Access to resources Recommend Favorite

Compact modelling of InAlN/GaN HEMT for low noise applications

By Sakalas P   Šimukovič A   Piotrowicz S   Jardel O   Delage S L   Mukherjee A   Matulionis A  

Semiconductor Science and Technology, Vol. 29, Iss. 9, 2014-09 ,pp. : 95014-95021

IOP Publishing

Access to resources Recommend Favorite

Polarization-Engineered Enhancement-Mode High-Electron-Mobility Transistors Using Quaternary AlInGaN Barrier Layers

By Reuters Benjamin  

Journal of Electronic Materials, Vol. 42, Iss. 5, 2013-05 ,pp. : 826-832

Springer Publishing Company

Access to resources Recommend Favorite

60 Co gamma radiation effects on DC, RF, and pulsed I-V characteristics of AlGaN/GaN HEMTs

By Aktas O.   Kuliev A.   Kumar V.   Schwindt R.   Toshkov S.   Costescu D.   Stubbins J.   Adesida I.  

Solid-State Electronics, Vol. 48, Iss. 3, 2004-03 ,pp. : 471-475

Elsevier

Access to resources Recommend Favorite